Merge tag 'samsung-dt-6.10' of https://git.kernel.org/pub/scm/linux/kernel/git/krzk...

Samsung DTS ARM changes for v6.10

1. Few cleanups of deprecated properties and node names pointed out by
   bindings newly converted to DT schema.
2. Fix S5PV210 NAND node size-cells, pointed out by DT schema.
3. Add FIFO depth to each SPI node so we can avoid matching this through
   DTS alias.  Difference SPI instances on given SoC have different FIFO
   depths.
4. Fix Exynos4212 Galaxy Tab3 usable memory, because stock bootloader is
   not telling us truth.

* tag 'samsung-dt-6.10' of https://git.kernel.org/pub/scm/linux/kernel/git/krzk/linux:
  ARM: dts: exynos4212-tab3: limit usable memory range
  ARM: dts: samsung: s5pv210: specify the SPI FIFO depth
  ARM: dts: samsung: exynos5420: specify the SPI FIFO depth
  ARM: dts: samsung: exynos5250: specify the SPI FIFO depth
  ARM: dts: samsung: exynos4: specify the SPI FIFO depth
  ARM: dts: samsung: exynos3250: specify the SPI FIFO depth
  ARM: dts: samsung: s5pv210: correct onenand size-cells
  ARM: dts: samsung: s5pv210: align onenand node name with bindings
  ARM: dts: samsung: exynos5800-peach-pi: switch to undeprecated DP HPD GPIOs
  ARM: dts: samsung: smdk4412: align keypad node names with dtschema
  ARM: dts: samsung: smdk4412: fix keypad no-autorepeat
  ARM: dts: samsung: exynos4412-origen: fix keypad no-autorepeat
  ARM: dts: samsung: smdkv310: fix keypad no-autorepeat

Link: https://lore.kernel.org/r/[email protected]
Signed-off-by: Arnd Bergmann <[email protected]>